cystech electronics corp. spec. no. : c303n3s issued date : 2003.04.12 revised date : 2010.10.21 page no. : 1/6 MMBD5148N3 cystek product specification high ?speed double diode MMBD5148N3 description the MMBD5148N3 consists of two high-speed switching diodes with co mmon cathodes, fabricated in planar technology, and encapsulated in the small sot-23 plastic smd package. equivalent circuit outline MMBD5148N3 sot-23 features ? small plastic smd package ? high switching speed: max. 4ns ? continuous reverse voltage: max. 100v ? repetitive peak reverse voltage: max. 100v ? repetitive peak forward current: max. 450ma . applications ? high-speed switching in thick and thin-film circuits. 1 2 3 common cathode 1anode anode anode 2anode 3common cathode
cystech electronics corp. spec. no. : c303n3s issued date : 2003.04.12 revised date : 2010.10.21 page no. : 2/6 MMBD5148N3 cystek product specification absolute maximum ratings @t a =25 parameters symbol min max unit repetitive peak reverse voltage v rrm - 100 v continuous reverse voltage v r - 100 v continuous forward current(single diode loaded) - 215 continuous forward current(double diode loaded) i f - 125 ma repetitive peak forward current i frm 450 ma non-repetitive peak forward current @square wave, tj=125 prior to surge t=1 s t=1ms t=1s i fsm - - - 4 1 0.5 a a a total power dissipation( note 1 ) ptot 250 mw junction temperature t j - 150 c storage temperature t stg -65 +150 c note 1: device mounted on an fr-4 pcb. electrical characteristics @ tj=25 unless otherwise specified parameters symbol conditions min typ. max unit forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma - - 715 855 1 1.25 mv mv v v reverse current i r v r =100v v r =25v,tj=150 v r =75v,tj=150 - - 30 60 100 na a a diode capacitance cd v r =0v, f=1mhz - - 1.5 pf reverse recovery time trr when switched from i f =10ma to i r =10ma,r l =100? , measured at i r =1ma - - 4 ns forward recovery voltage vfr when switched from i f =10ma tr=20ns - - 1.75 v thermal characteristics symbol parameter conditions value unit rth,j-tp thermal resistance from junction to tie-point 360 /w rth, j-a thermal resistance from junction to ambient note 1 500 /w note 1: device mounted on an fr-4 pcb.
cystech electronics corp. spec. no. : c303n3s issued date : 2003.04.12 revised date : 2010.10.21 page no. : 3/6 MMBD5148N3 cystek product specification characteristic curves forward current vs ambient temperature 0 25 50 75 100 125 150 175 200 225 250 0 50 100 150 200 ambient temperature---ta() forward current---if(ma) single diode loaded double diode loaded forward current vs forward voltage 0 25 50 75 100 125 150 175 200 225 250 275 0 0.2 0.4 0.6 0.8 1 1.2 1.4 forward voltage---vf(v) forward current---if(ma ) non-repetitive peak forward current vs pulse duration 0.1 1 10 100 1 10 100 1000 10000 pulse duration---tp(s) non-repetitive peak forward current---ifsm(a) diode capacitance vs reverse voltage 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 2 4 6 8 10 12 14 16 reverse voltage---vr(v) diode capacitance---cd(pf) ordering information device package shipping marking MMBD5148N3 sot-23 (pb-free) 3000 pcs / tape & reel a4
cystech electronics corp. spec. no. : c303n3s issued date : 2003.04.12 revised date : 2010.10.21 page no. : 4/6 MMBD5148N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c303n3s issued date : 2003.04.12 revised date : 2010.10.21 page no. : 5/6 MMBD5148N3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c303n3s issued date : 2003.04.12 revised date : 2010.10.21 page no. : 6/6 MMBD5148N3 cystek product specification sot-23 dimension *: typical inches millimeters inches millimeters h j k d a l g v c b 3 2 1 s style: pin 1.anode 2.anode 3.common cathode marking: te a4 device code 3-lead sot-23 plastic surface mounted package cystek package code: n3 dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0034 0.0070 0.085 0.177 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1083 2.10 2.75 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0005 0.0040 0.013 0.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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